Amplitude modulator circuit featuring TiO2 memristor with linear dopant drift

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Abstract
  • An amplitude modulation circuit architecture featuring a recently published titanium dioxide (TiO2) memristor is proposed. The circuit performance is analysed and simulated with the published physical memristor model under the condition of linear dopant drift. The simulated results demonstrate that the performance is well predicted by the mathematical analysis and supports the viability of the design.
TitleAmplitude modulator circuit featuring TiO2 memristor with linear dopant drift
CreatorWey, Todd A.
Benderli, S.
PublisherElectronics Letters
Academic DepartmentElectrical & Computer Engineering
DivisionEngineering
OrganizationLafayette College
Date IssuedOctober 22, 2009
Date Available2023-04-04
TypeArticle
LanguageEnglish
Bibliographic CitationWey, T. A. and S. Benderli. (2009 Oct 22) "Amplitude modulator circuit featuring TiO2 memristor with linear dopant drift." Electronics Letters 45 (22): 1103-1004.
Standard IdentifierDOI 10.1049/el.2009.2174
Handle 10385/x920fz44v
Permalinkhttp://hdl.handle.net/10385/x920fz44v
Rights Statement In Copyright In Copyright
Rights HoldersThe Institution of Engineering and Technology
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File Wey-ElectronicsLetters-vol45-2009.pdf Uploaded 2023-04-04 Public Download

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